NPN Bipolar (BJT) Transistor, 40V, 200mA, 300MHz, 250mW, Surface Mount, TO-236AB. Vce Saturation (Max) @ Ib, Ic: 300 mV @ 5 mA, 50 mA. Collector Cutoff Current (Max) (ICBO): 50 nA. DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10 mA, 1 V.
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