Research on the Radiation Effects and Compact Model of SiGe HBT - 9789811046117

ISBN-13: 9789811046117, 978-9811046117. This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting.

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