Irf640.
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This P-Channel Enhancement Mode Silicon Gate Power Field Effect Transistor is an Advanced Power Mosfet Designed, Tested and Guaranteed to Withstand a Specfied Level of Energy in The Breakdown Avalanche Mode of Operation. All of These Power Mosfets Are Designed for Applications Such As Switching Regulars, Switching Conertors, Motor Drivers, Relays Drivers, and Drivers for High Power Bipolar Switching Transistors Requiring High Speed and Low Gate Drive Power. These Types can be operated Directly from Integrated Circuits. Formerly Developmental Type Ta17502. Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Preventance If specified I can send by courier but a difference in the price will be requested that will be by means of payment in Payp.
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Case: TO220AB. Polarization: Unipolar. Manufacturer: VISHAY. Power dissipation: 40W. Transistor Type: P-MOSFET. Channel Type: Strong. Mounting: THT.
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IRF730 SEMICONDUCTOR X 2. Unused old stock, sale is for 2 pieces.
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MOSFET, P, TO-220 Transistor Polarity: P Channel Continuous Drain Current Id: 3.5A 200V On Resistance Rds(on): 1.5ohm 10V 4V Power Dissipation Pd: 40W Transistor Case Style: TO-220AB No. of Pins: 3Pins Operating Temperature Max: 150�C 3.5A Current Temperature: 25�C Full Power Rating Temperature: 25�C Lead Spacing: 2.54mm No. of Transistors: 1 55�C 55�C to +150�C Pin Configuration: a Pin Format: 1 g 2 d/tab 3 s Pulse Current Idm: 14A 200V Voltage Vgs Max: 20V 10V
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Irf640m.
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1 pcs x VISHAY - IRF9620PBF - Transistor: P-MOSFET, unipolar, -200V, -2A, 40W, TO220AB.
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